These junctions construct two P-N diodes or gates and the place located in the center of the gates is called a channel. Then, two P-type junctions are diffused on opposite sides in the middle part of the N bar (figure a). ![]() For devising an N channel JFET, first, a narrow bar of N-type semiconductor material (usual silicon) is taken. If the arrow sign is towards the gate, it is N channel JFET and if its direction is outward, it is P channel JFET (figure 5.9) Figure 5.9Ī JFET(Junction Field Effect Transistor) is fabricated alongside an N channel or P channel (although an N channel is normally preferred). There is an arrow sign on its electrodes’ gate. Its input resistance is very high and reverse bias is supplied on its gate. In other words, a transistor with two PN junctions on opposite sides of its channels is called JFET. This is the first form of FET which is simply known as JFET(Junction Field Effect Transistor). ![]() When Vgs Value is Zero and Vds Value is Increased from ZeroĪ FET with a PN junction between its gate and channel is called junction FET(Field Effect Transistor).Control of Id by Changing the Values of Vg.Junction Field Effect Transistor (JFET).
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